Introduction to 3D NAND
As planar NAND shrinkage faces the difficulties in increasing cell density, 3D NAND is the next generation of technology for the flash memory industry and has been the focal development for ATP. The intuitive concept of design by stacking more layers vertically can expand the capacity from limited die size. Stacking up vertically instead of scaling down planarly allows larger NAND cells with better performance and endurance.
Why should I migrate to ATP 3D NAND, what are the benefits ?
Higher Memory Capacity
By stacking more layers vertically, greater capacities, such as 1TB, 1.5 TB and 2TB, are made possible through 3D NAND.
Lower cost per bit
Compared to planar NAND, 3D NAND shows greater cost advantage as the capacity increases.
Increased longevity and supply flexibility through ATP's die packaging
Our high end manufacturing facility is capable of processing NAND wafer dies into ATP’s own SDP, DDP, QDP or ODP BGA packages. This significantly simplifies supply chain planning and results in higher flexibility and better lead times. At the same time, it allows us to offer better longevity for our products through extended wafer supply agreements with our manufacturers.
ATP 3D NAND memory technology features for your application
PowerProtector-Power Cycling Protection
An advanced power protection mechanism integrating hardware designs and firmware
algorithm is designed for supplying sufficient power and sustaining data integrity during power failure.
AutoRefresh and Dynamic Data Refresh
ATP AutoRefresh and Dynamic Data Refresh checks not only error bits but also reads counts
in both frequent and seldom read areas. Once reaching the error bit or read count threshold,
the data will be moved to another healthy blocks to prevent data corruptions.
Without affecting read/write operation, Dynamic Data Refresh runs automatically in the
background and sequentially scans the user area with flag record.
Therefore, the risk of data loss due to read disturbance and data retention issue is mitigated.
ATP S.M.A.R.T. reliably detects the remaining life of the device and is available to be integrated
into host systems. It is seen as an early warning command tool to prevent wear out and spare
block exhaustion and furthermore allows users sufficient time for safe storage retirement and replacement.
By conducting stringent industrial temperature tests, ATP has validated that ATP 3D NAND
products can withstand environmental asperity (-40°C~+85°C).
ATP Secure Erase initiates a block-by-block data pattern write operation to systematically
eliminate any trace of the original data. ATP Secure Erase ensures all data are completely
removed and allows no chance of data recovery.
For more details about the latest ATP products and solutions, please contact your local ATP representatives, or email email@example.com .